?2004 fairchild semiconductor corporation rev. b2, october 2004 bc636/638/640 pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted symbol parameter value units v cer collector-emitter voltage at r be =1k ? : bc636 : bc638 : bc640 -45 -60 -100 v v v v ces collector-emitter voltage : bc636 : bc638 : bc640 -45 -60 -100 v v v v ceo collector-emitter voltage : bc636 : bc638 : bc640 -45 -60 -80 v v v v ebo emitter-base voltage -5 v i c collector current -1 a i cp peak collector current -1.5 a i b base current -100 ma p c collector power dissipation 1 w t j junction temperature 150 c t stg storage temperature -65 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo collector-emitter breakdown voltage : bc636 : bc638 : bc640 i c = -10ma, i b =0 -45 -60 -80 v v v i cbo collector cut-off current v cb = -30v, i e =0 -0.1 a i ebo emitter cut-off current v eb = -5v, i c =0 -10 a h fe1 h fe2 h fe3 dc current gain : all : bc636 : bc638/bc640 : all v ce = -2v, i c = -5ma v ce = -2v, i c = -150ma v ce = -2v, i c = -500ma 25 40 40 25 250 160 v ce (sat) collector-emitter saturation voltage i c = -500ma, i b = -50ma -0.5 v v be (on) base-emitter on voltage v ce = -2v, i c = -500ma -1 v f t current gain bandwidth product v ce = -5v, i c = -10ma, f=50mhz 100 mhz bc636/638/640 switching and amplifier applications ? complement to bc635/637/639 1. emitter 2. collector 3. base to-92 1
?2004 fairchild semiconductor corporation rev. b2, october 2004 bc636/638/640 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance -0 -10 -20 -30 -40 -50 -0 -100 -200 -300 -400 -500 i b = - 0.2 ma i b = - 0.4 ma i b = - 0.6 ma i b = - 0.8 ma i b = - 1.0 ma i b = - 1.2 ma i b = - 1.4 ma i b = - 1.6 ma i b = - 1.8 ma i c [ma], collector current v ce [v], collector-emitter voltage -1 -10 -100 -1000 10 100 1000 v ce = - 2v h fe , dc current gain i c [ma], collector current -1 -10 -100 -1000 -0.01 -0.1 -1 -10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 v ce = - 2v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 100 f=1mhz c ob [pf], capacitance v cb [v], collector-base voltage
package dimensions bc636/638/640 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 dimensions in millimeters rev. b2, october 2004 ?2004 fairchild semiconductor corporation
?2004 fairchild semiconductor corporation disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i13 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? a cex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop?
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